The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
May. 27, 2010
Marie Denison, Plano, TX (US);
Seetharaman Sridhar, Richardson, TX (US);
Sameer Pendharkar, Allen, TX (US);
Umamaheswari Aghoram, Richardson, TX (US);
Marie Denison, Plano, TX (US);
Seetharaman Sridhar, Richardson, TX (US);
Sameer Pendharkar, Allen, TX (US);
Umamaheswari Aghoram, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit on a (100) substrate containing an n-channel extended drain MOS transistor with drift region current flow oriented in the <100> direction with stressor RESURF trenches in the drift region. The stressor RESURF trenches have stressor elements with more than 100 MPa compressive stress. An integrated circuit on a (100) substrate containing an n-channel extended drain MOS transistor with drift region current flow oriented in the <110> direction with stressor RESURF trenches in the drift region. The stressor RESURF trenches have stressor elements with more than 100 MPa compressive stress. An integrated circuit on a (100) substrate containing a p-channel extended drain MOS transistor with drift region current flow oriented in a <110> direction with stressor RESURF trenches in the drift region. The stressor RESURF trenches have stressor elements with more than 100 MPa tensile stress.