The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Oct. 24, 2011
Kuang-hung Huang, Tainan, TW;
Po-jui Liao, Taichung, TW;
Yao-chang Wang, Tainan, TW;
Chi-sheng Tseng, Kaohsiung, TW;
Jie-ning Yang, Ping-Tung County, TW;
Kuang-Hung Huang, Tainan, TW;
Po-Jui Liao, Taichung, TW;
Yao-Chang Wang, Tainan, TW;
Chi-Sheng Tseng, Kaohsiung, TW;
Jie-Ning Yang, Ping-Tung County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess but exposing a top part of the first recess. The first metal layer in the top part of the first recess and in the second recess is simultaneously removed. The material is removed. A second metal layer and a metal gate layer in the first recess and the second recess are sequentially filled.