The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Jul. 19, 2012
Yung-fa Lin, Hsinchu, TW;
Shou-yi Hsu, Hsinchu County, TW;
Meng-wei Wu, Hsinchu, TW;
Chia-hao Chang, Hsinchu, TW;
Yung-Fa Lin, Hsinchu, TW;
Shou-Yi Hsu, Hsinchu County, TW;
Meng-Wei Wu, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
The present invention provides a manufacturing method of a power transistor device. First, a semiconductor substrate of a first conductivity type is provided, and at least one trench is formed in the semiconductor substrate. Next, the trench is filled with a dopant source layer, and a first thermal drive-in process is performed to form two doped diffusion regions of a second conductivity type in the semiconductor substrate, wherein the doping concentration of each doped diffusion region close to the trench is different from the one of each doped diffusion region far from the trench. Then, the dopant source layer is removed and a tilt-angle ion implantation process and a second thermal drive-in process are performed to adjust the doping concentration of each doped diffusion region close to the trench.