The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Aug. 23, 2011
Applicants:
Bang-tai Tang, New Taipei, TW;
Cheng-yuan Tsai, Chu-Pei, TW;
Inventors:
Bang-Tai Tang, New Taipei, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/20 (2006.01); H01L 41/06 (2006.01); G11B 5/39 (2006.01); H01L 21/285 (2006.01); H01L 21/64 (2006.01); H01L 29/88 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form an MTJ cell, and forming a dielectric cap layer over a top surface and on a sidewall of the MTJ cell. The step of patterning and the step of forming the dielectric cap layer are in-situ formed in a same vacuum environment. A plasma treatment is performed on the dielectric cap layer to transform the dielectric cap layer into a treated dielectric cap layer, whereby the treated dielectric cap layer improves protection from HO or O, and thus degradation.