The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 13, 2011
Tatsuya Usami, Kanagawa, JP;
Hideaki Tsuchiya, Kanagawa, JP;
Yukio Miura, Kanagawa, JP;
Tomoyuki Nakamura, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Chikako Ohto, Kanagawa, JP;
Shinji Yokogawa, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Hideaki Tsuchiya, Kanagawa, JP;
Yukio Miura, Kanagawa, JP;
Tomoyuki Nakamura, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Chikako Ohto, Kanagawa, JP;
Shinji Yokogawa, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cmto 860 cm. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.