The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Nov. 01, 2012
Renesas Electronics Corporation, Kawasaki, JP;
Hiroshi Takeda, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Disclosed is a semiconductor device whose breakdown voltage is made high by controlling local concentration of an electric field. A source region faces a second plane, one of side faces of a groove part, and a part thereof extends in a direction in parallel to a nodal line of first and second planes. A drift region faces a third plane being the other side face of the groove part opposite to the second plane with a part thereof extending in a direction parallel to the nodal line of the first plane and the third plane, and is formed at a lower concentration than the source region. The drain region is provided so as to be placed on the other side of the drift region opposite to the groove part and so as to touch the drift region, and is formed at a higher concentration than the drift region.