The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Apr. 16, 2012
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Ryou Kato, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Ryou Kato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structurewith a p-type semiconductor region, of which the surfacedefines a tilt angle of one to five degrees with respect to an m plane, and an electrode, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlInGaN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer. The electrodeincludes an Mg layer, which is in contact with the surfaceof the p-type semiconductor region, and a metal layerformed on the Mg layer. The metal layeris formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.