The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
May. 01, 2008
Koki Yano, Chiba, JP;
Kazuyoshi Inoue, Chiba, JP;
Futoshi Utsuno, Chiba, JP;
Masashi Kasami, Chiba, JP;
Katsunori Honda, Chiba, JP;
Koki Yano, Chiba, JP;
Kazuyoshi Inoue, Chiba, JP;
Futoshi Utsuno, Chiba, JP;
Masashi Kasami, Chiba, JP;
Katsunori Honda, Chiba, JP;
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistorprovided with a semiconductor which is composed of a prescribed material and serves as an active layerand a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode, a drain electrodeand a pixel electrode, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode, a source wire, a drain electrode, a drain wireand a pixel electrode) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer