The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Feb. 23, 2011
Udayan Ganguly, Mambai, IN;
Theresa Kramer Guarini, San Jose, CA (US);
Matthew Scott Rogers, Mountain View, CA (US);
Yoshitaka Yokota, San Jose, CA (US);
Johanes S. Swenberg, Los Gatos, CA (US);
Malcolm J. Bevan, Santa Clara, CA (US);
Udayan Ganguly, Mambai, IN;
Theresa Kramer Guarini, San Jose, CA (US);
Matthew Scott Rogers, Mountain View, CA (US);
Yoshitaka Yokota, San Jose, CA (US);
Johanes S. Swenberg, Los Gatos, CA (US);
Malcolm J. Bevan, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.