The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Nov. 30, 2011
Guowen Ding, San Jose, CA (US);
Mohd Fadzli Anwar Hassan, San Francisco, CA (US);
Hien Minh Huu Le, San Jose, CA (US);
Zhi-wen Sun, San Jose, CA (US);
Guowen Ding, San Jose, CA (US);
Mohd Fadzli Anwar Hassan, San Francisco, CA (US);
Hien Minh Huu Le, San Jose, CA (US);
Zhi-Wen Sun, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.