The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Feb. 05, 2012
Applicants:
Akira Fujimura, Saratoga, CA (US);
Robert C. Pack, Morgan Hill, CA (US);
Inventors:
Akira Fujimura, Saratoga, CA (US);
Robert C. Pack, Morgan Hill, CA (US);
Assignee:
D2S, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.
Quick Actions:
Fujimura, Akira. (2014). Method and system for forming high precision patterns using charged particle beam lithography (U.S. Patent No. 8745549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8745549
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile