The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Mar. 15, 2012
Matthew J. Brightsky, Essex Junction, VT (US);
Roger W. Cheek, Somers, NY (US);
Ming-hsiu Lee, Hsinchu, TW;
Matthew J. BrightSky, Essex Junction, VT (US);
Roger W. Cheek, Somers, NY (US);
Ming-Hsiu Lee, Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory chip and methods of fabricating a memory device with different programming performance and retention characteristics on a single wafer. One method includes depositing a first bounded area of phase change material on the wafer and depositing a second bounded area of phase change material on the wafer. The method includes modifying the chemical composition of a switching volume of the first bounded area of phase change material. The method includes forming a first memory cell in the first bounded area of phase change material with a modified switching volume of phase change material and a second memory cell in the second bounded area of phase change material with an unmodified switching volume of phase change material such that the first memory cell has a first retention property and the second memory cell has a second retention property. The first retention property is different from the second retention property.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile