The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Nov. 03, 2011
Fu-chun Chien, Hsinchu County, TW;
Ching-wei Teng, Taoyuan County, TW;
Nien-chung LI, Hsinchu, TW;
Chih-chung Wang, Hsinchu, TW;
Te-yuan Wu, Hsinchu, TW;
Li-che Chen, Pingtung County, TW;
Chih-chun Pu, Hsinchu, TW;
Yu-ting Yeh, Tainan, TW;
Kuan-wen LU, Hsinchu, TW;
Fu-Chun Chien, Hsinchu County, TW;
Ching-Wei Teng, Taoyuan County, TW;
Nien-Chung Li, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Te-Yuan Wu, Hsinchu, TW;
Li-Che Chen, Pingtung County, TW;
Chih-Chun Pu, Hsinchu, TW;
Yu-Ting Yeh, Tainan, TW;
Kuan-Wen Lu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a high voltage semiconductor device is provided. Firstly, a substrate is provided, wherein the substrate has a first active zone and a second active zone. Then, a first ion implantation process is performed to dope the substrate by a first mask layer, thereby forming a first-polarity doped region at the two ends of the first active zone and a periphery of the second active zone. After the first mask layer is removed, a second ion implantation process is performed to dope the substrate by a second mask layer, thereby forming a second-polarity doped region at the two ends of the second active zone and a periphery of the first active zone. After the second mask layer is removed, a first gate conductor structure and a second gate conductor structure are formed over the middle segments of the first active zone and the second active zone, respectively.