The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Apr. 18, 2012
Applicants:

Cheng-hung Wei, Hsinchu, TW;

Bo-wen Lin, Hsinchu, TW;

Ching-yen Peng, Hsinchu, TW;

Hao-chung Kuo, Hsinchu, TW;

Wen-ching Hsu, Hsinchu, TW;

Inventors:

Cheng-Hung Wei, Hsinchu, TW;

Bo-Wen Lin, Hsinchu, TW;

Ching-Yen Peng, Hsinchu, TW;

Hao-Chung Kuo, Hsinchu, TW;

Wen-Ching Hsu, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.


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