The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Sep. 17, 2013
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

Boxiu Cai, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); G01N 23/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for detecting an electron beam of a SEM and for detecting fine patterns are provided. Line patterns having a length in a first direction can be formed on a detection sample. A power spectral density (PSD) curve of a standardized model, formed under a same exposure process of the detection sample, can be obtained. An edge contour of each line pattern of the detection sample can be obtained by the SEM and can be sampled at a sampling frequency to obtain a variation range at a sampling point on the edge contour in a second direction that is perpendicular to the first direction. A PSD curve of the detection sample can be obtained according to the variation range and can be compared with the PSD curve of the standardized model to determine whether an electron beam of the SEM has a high quality in the second direction.


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