The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Jul. 20, 2011
Applicants:

Srinivas D. Nemani, Sunnyvale, CA (US);

Yifeng Zhou, Fremont, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Ellie Yieh, San Jose, CA (US);

Inventors:

Srinivas D. Nemani, Sunnyvale, CA (US);

Yifeng Zhou, Fremont, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Ellie Yieh, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.


Find Patent Forward Citations

Loading…