The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Mar. 15, 2013
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventors:
Qiming Li, Albuquerque, NM (US);
George T. Wang, Albuquerque, NM (US);
Jeffrey T. Figiel, Albuquerque, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.