The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Jan. 05, 2007
Applicants:

Omar Zia, Austin, TX (US);

Nigel Cave, Austin, TX (US);

Venkat Kolagunta, Austin, TX (US);

Ruiqi Tian, Austin, TX (US);

Edward O. Travis, Austin, TX (US);

Inventors:

Omar Zia, Austin, TX (US);

Nigel Cave, Austin, TX (US);

Venkat Kolagunta, Austin, TX (US);

Ruiqi Tian, Austin, TX (US);

Edward O. Travis, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7624 (2013.01); H01L 21/76229 (2013.01); H01L 21/76278 (2013.01); H01L 21/76283 (2013.01);
Abstract

A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (); and (c) using the first and second masks to create a semiconductor device.


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