The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Aug. 02, 2012
Leland Chang, Yorktown Heights, NY (US);
Brian L. Ji, Yorktown Heights, NY (US);
Chung-hsun Lin, Yorktown Heights, NY (US);
Jeffrey W. Sleight, Yorktown Heights, NY (US);
Leland Chang, Yorktown Heights, NY (US);
Brian L. Ji, Yorktown Heights, NY (US);
Chung-Hsun Lin, Yorktown Heights, NY (US);
Jeffrey W. Sleight, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a field effect transistor (FET) capacitor includes forming a channel region; forming a gate stack over the channel region; forming a first extension region on a first side of the gate stack, the first extension region being formed by implanting a first doping material at a first angle such that a shadow region exists on a second side of the gate stack; and forming a second extension region on the second side of the gate stack, the second extension region being formed by implanting a second doping material at a second angle such that a shadow region exists on the first side of the gate stack.