The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 18, 2012
Tony P. Chiang, Campbell, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Tony P. Chiang, Campbell, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Elpidia Memory, Inc., Tokyo, JP;
Abstract
A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high-k phase of a subsequently deposited dielectric layer. The high-k dielectric layer includes a doped material that can be crystallized after a subsequent annealing treatment. An amorphous blocking is formed on the dielectric layer. The thickness of the blocking layer is chosen such that the blocking layer remains amorphous after a subsequent annealing treatment. A second electrode layer compatible with the blocking layer is formed on the blocking layer.