The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
May. 23, 2011
Kyoung Wook Seok, Milpitas, CA (US);
Jae Yong Choi, Seoul, KR;
Vladimir Tsukanov, Palo Alto, CA (US);
Kyoung Wook Seok, Milpitas, CA (US);
Jae Yong Choi, Seoul, KR;
Vladimir Tsukanov, Palo Alto, CA (US);
IXYS Corporation, Milpitas, CA (US);
Abstract
A process for fabrication of a power semiconductor device is disclosed in which a single photomask is used to define each of p-conductivity well regions and n-conductivity type source regions. In the process a single photomask is deposited on a layer of polysilicon on a wafer, the polysilicon layer is removed from first regions of the power semiconductor device where the p-conductivity well regions and the n-conductivity type source regions are to be formed, and both p-conductivity type and n-conductivity type dopants are introduced into the wafer through the first regions.