The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Dec. 08, 2011
Applicants:

Kyoung-hee Kim, Incheon, KR;

Gil-heyun Choi, Seoul, KR;

Kyu-hee Han, Hwaseong-si, KR;

Byung-lyul Park, Seoul, KR;

Byung-hee Kim, Seoul, KR;

Sang-hoon Ahn, Hwaseong-si, KR;

Kwang-jin Moon, Suwon-si, KR;

Inventors:

Kyoung-Hee Kim, Incheon, KR;

Gil-Heyun Choi, Seoul, KR;

Kyu-Hee Han, Hwaseong-si, KR;

Byung-Lyul Park, Seoul, KR;

Byung-Hee Kim, Seoul, KR;

Sang-Hoon Ahn, Hwaseong-si, KR;

Kwang-Jin Moon, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device comprises a top surface having a first contact, a bottom surface having a second contact, a via hole penetrating a substrate, an insulation layer structure on a sidewall of the via hole, the insulation layer structure having an air gap therein, a through electrode having an upper surface and a lower surface on the insulation layer structure, the through electrode filling the via hole and the lower surface being the second contact, and a metal wiring electrically connected to the upper surface of the through electrode and electrically connected to the first contact.


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