The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Sep. 27, 2011
Yao-jen Tsai, Kaohsiung, TW;
Chih-fu Chang, Neipu Township, TW;
Chih-kang Chuang, Tainan, TW;
Yee-ren Wuang, Tainan, TW;
David Yen, Chu-Bak, TW;
Yuan-jen Liao, Zhongli, TW;
Shih-che Fang, Tainan, TW;
Hung-che Hsueh, Tainan, TW;
Chih Mou Huang, Tainan, TW;
Yao-Jen Tsai, Kaohsiung, TW;
Chih-Fu Chang, Neipu Township, TW;
Chih-Kang Chuang, Tainan, TW;
Yee-Ren Wuang, Tainan, TW;
David Yen, Chu-Bak, TW;
Yuan-Jen Liao, Zhongli, TW;
Shih-Che Fang, Tainan, TW;
Hung-Che Hsueh, Tainan, TW;
Chih Mou Huang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.