The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jul. 12, 2012
Takashi Ando, Tuckahoe, NY (US);
Unoh Kwon, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
James K. Schaeffer, Dresden, DE (US);
Takashi Ando, Tuckahoe, NY (US);
Unoh Kwon, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
James K. Schaeffer, Dresden, DE (US);
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Cayman Islands, KY;
Abstract
A semiconductor structure is provided. The structure includes a semiconductor substrate of a semiconductor material and a gate dielectric having a high dielectric constant dielectric layer with a dielectric constant greater than silicon. The gate dielectric is located on the semiconductor substrate. A gate electrode abuts the gate dielectric. The gate electrodes includes a lower metal layer abutting the gate dielectric, a scavenging metal layer abutting the lower metal layer, an upper metal layer abutting the scavenging metal layer, and a silicon layer abutting the upper metal layer. The scavenging metal layer reduces an oxidized layer at an interface between the upper metal layer and the silicon layer responsive to annealing.