The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Mar. 27, 2012
Applicants:

Chia-chu Liu, Hsinchu, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chiang Mu-chi, Hsinchu, TW;

Inventors:

Chia-Chu Liu, Hsinchu, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chiang Mu-Chi, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes an electrical-free dummy gate formed over a substrate. The dummy gate has an elongate shape and is oriented along a first direction. The semiconductor device includes a first functional gate formed over the substrate. The first functional gate has an elongate shape and is oriented along the first direction. The first functional gate is separated from the dummy gate in a second direction perpendicular to the first direction. A first conductive contact is formed on the first functional gate. The semiconductor device includes a second functional gate formed over the substrate. The second functional gate has an elongate shape and is oriented along the first direction. The second functional gate is aligned with and physically separated from the dummy gate in the first direction. A second conductive contact is formed on the second functional gate.


Find Patent Forward Citations

Loading…