The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Feb. 28, 2007
Brent A. Anderson, Jericho, VT (US);
Robert H. Dennard, Croton-on-Hudson, NY (US);
Mark C. Hakey, Fairfax, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
Brent A. Anderson, Jericho, VT (US);
Robert H. Dennard, Croton-on-Hudson, NY (US);
Mark C. Hakey, Fairfax, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The embodiments of the invention provide a structure and method for a rad-hard FinFET or mesa. More specifically, a semiconductor structure is provided having at least one fin or mesa comprising a channel region on an isolation region. A doped substrate region is also provided below the fin, wherein the doped substrate region has a first polarity opposite a second polarity of the channel region. The isolation region contacts the doped substrate region. The structure further includes a gate electrode covering the channel region and at least a portion of the isolation region. The gate electrode comprises a lower portion below the channel region of the fin, wherein the lower portion of the gate electrode comprises a height that is at least one-half of a thickness of the fin.