The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Sep. 23, 2008
Applicant:
Yoshihiro Takaishi, Tokyo, JP;
Inventor:
Yoshihiro Takaishi, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided which includes: semiconductor pillars which include impurity diffused layers, each semiconductor pillar having a width which allows full depletion of a semiconductor forming each semiconductor pillar, the impurity diffused layers being electrically connected to each other; and a common gate section which covers side faces of the pillars.
Takaishi, Yoshihiro. (2014). Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system (U.S. Patent No. 8735970). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8735970
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile