The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 17, 2008
Minh Q. Tran, Milpitas, CA (US);
Minh-van Ngo, Fremont, CA (US);
Alexander H. Nickel, Santa Clara, CA (US);
Sung Jin Kim, Palo Alto, CA (US);
Simon Chan, Saratoga, CA (US);
Ning Cheng, San Jose, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Minh-Van Ngo, Fremont, CA (US);
Alexander H. Nickel, Santa Clara, CA (US);
Sung Jin Kim, Palo Alto, CA (US);
Simon Chan, Saratoga, CA (US);
Ning Cheng, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.