The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
May. 01, 2012
Applicants:
Wen Chu Hsiao, Tainan, TW;
Lai Wan Chong, Kaohsiung, TW;
Chun-chieh Wang, Kaohsiung, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-lang Wang, Tien-Chung Village, TW;
Inventors:
Wen Chu Hsiao, Tainan, TW;
Lai Wan Chong, Kaohsiung, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.