The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
May. 18, 2012
Jin-wook Lee, Seoul, KR;
Myeong-cheol Kim, Suwon-si, KR;
Heung-sik Park, Yongin-si, KR;
Sang-min Lee, Hwaseong-si, KR;
Hyun-ho Jung, Seoul, KR;
Jin-wook Lee, Seoul, KR;
Myeong-cheol Kim, Suwon-si, KR;
Heung-sik Park, Yongin-si, KR;
Sang-min Lee, Hwaseong-si, KR;
Hyun-ho Jung, Seoul, KR;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a substrate having a protruding channel region, forming a gate insulation layer surrounding the protruding channel region, forming a sacrificial layer having an etch selectivity varying in a thickness direction of the sacrificial layer, on the gate insulation layer, and performing a gate-last process to form a gate electrode on the gate insulation layer in place of the sacrificial layer.