The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 30, 2010
Joy Cheng, San Jose, CA (US);
Hayato Namai, San Jose, CA (US);
Charles Thomas Rettner, San Jose, CA (US);
Daniel Paul Sanders, San Jose, CA (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
Joy Cheng, San Jose, CA (US);
Hayato Namai, San Jose, CA (US);
Charles Thomas Rettner, San Jose, CA (US);
Daniel Paul Sanders, San Jose, CA (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
JSR Corporation, Tokyo, JP;
Abstract
Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain.