The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8734662 B1

PDF
Full Text
Expired
Date of Patent:
May. 27, 2014

Filed:

Dec. 06, 2011
Applicants:

Yu-rung Hsu, Tainan, TW;

Sung Hsun Wu, Kaohsiung, TW;

Kuo Bin Huang, Jhubei, TW;

Inventors:

Yu-Rung Hsu, Tainan, TW;

Sung Hsun Wu, Kaohsiung, TW;

Kuo Bin Huang, Jhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.


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Hsu, Yu-Rung. (2014). Techniques providing photoresist removal (U.S. Patent No. 8734662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8734662

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