The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Mar. 26, 2012
Romney R. Katti, Shorewood, MN (US);
James L. Tucker, Clearwater, FL (US);
Anuj Kohli, Apple Valley, MN (US);
Romney R. Katti, Shorewood, MN (US);
James L. Tucker, Clearwater, FL (US);
Anuj Kohli, Apple Valley, MN (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the MRAM die, and a chemical disposed in the reservoir. At least one boundary of the reservoir may be configured to be damaged in response to attempted tampering with the MRAM die, such that at least some of the chemical is released from the reservoir when the at least one boundary of the reservoir is damaged. In some examples, at least some of the chemical is configured to contact and alter or damage at least a portion of the MRAM cell when the chemical is released from the reservoir.