The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jan. 02, 2014
Ching-yao Yang, Changhua, TW;
Tsung-yi Huang, Hsinchu, TW;
Huan-ping Chu, Hsinchu, TW;
Hung-der Su, Pingzhen, TW;
Ching-Yao Yang, Changhua, TW;
Tsung-Yi Huang, Hsinchu, TW;
Huan-Ping Chu, Hsinchu, TW;
Hung-Der Su, Pingzhen, TW;
Richtek Tehnology Corporation, R.O.C., Chupei, Hsin-Chu, TW;
Abstract
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.