The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 28, 2012
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Ryou Kato, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Ryou Kato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structurewhich has a p-type GaN-based semiconductor region whose surfaceis inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrodethat is arranged on the p-type GaN-based semiconductor region. The electrodeincludes a Mg alloy layerwhich is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layeris in contact with the surfaceof the p-type GaN-based semiconductor region of the semiconductor multilayer structure