The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 23, 2011
Jongil Hwang, Kanagawa, JP;
Hung Hung, Kanagawa, JP;
Yasushi Hattori, Kanagawa, JE;
Rei Hashimoto, Tokyo, JP;
Shinji Saito, Kanagawa, JP;
Masaki Tohyama, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Jongil Hwang, Kanagawa, JP;
Hung Hung, Kanagawa, JP;
Yasushi Hattori, Kanagawa, JE;
Rei Hashimoto, Tokyo, JP;
Shinji Saito, Kanagawa, JP;
Masaki Tohyama, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cmand 1E20 atoms/cminclusive. The carbon concentration is equal to or less than 6E17 atoms/cm. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)−(X−2.70e19)}−4.63e19 holds.