The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Aug. 09, 2010
Applicants:

Hung-ling Shih, Chiaya County, TW;

Shin-chi Chen, Penghu County, TW;

Chieh-te Chen, Kaohsiung, TW;

Wei-hang Huang, Kaohsiung County, TW;

Inventors:

Hung-Ling Shih, Chiaya County, TW;

Shin-Chi Chen, Penghu County, TW;

Chieh-Te Chen, Kaohsiung, TW;

Wei-Hang Huang, Kaohsiung County, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a semiconductor device. A substrate having thereon at least one small pattern and at least one large pattern is provided. A sacrificial layer is deposited to cover the small pattern and the large pattern. A chemical mechanical polishing is performed to planarize the sacrificial layer. The sacrificial layer is then dry etched to a thickness that is smaller than a height of the small pattern and the large pattern, thereby revealing an oxide hard mask of the small pattern and the large pattern. The oxide hard mask is then selectively removed.


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