The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Dec. 11, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Kai-Tai Chang, Kaohsiung, TW;
Yi-Shan Chen, Tainan, TW;
Hsin-Chih Chen, Tucheng, TW;
Chih-Hsin Ko, Fongshan, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.