The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 26, 2013
Cypress Semiconductor Corporation, San Jose, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate, and forming bottom electrode spacers proximal to sidewalls of the opening. Next, a ferroelectric dielectric layer is formed in the opening over the surface of the substrate and between the bottom electrode spacers, and a pair of top electrodes is formed within the opening comprising first and second side portions displaced laterally from respective ones of the bottom electrode spacers by the ferroelectric dielectric layer.