The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Mar. 20, 2012
Applicants:

James W. Raring, Goleta, CA (US);

Daniel F. Feezell, Goleta, CA (US);

Nick Pfister, Goleta, CA (US);

Inventors:

James W. Raring, Goleta, CA (US);

Daniel F. Feezell, Goleta, CA (US);

Nick Pfister, Goleta, CA (US);

Assignee:

Soraa Laser Diode, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.


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