The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Feb. 12, 2010
Hui-chuan Wang, Pleasanton, CA (US);
Tong Zhao, Fremont, CA (US);
Min Zheng, Milpitas, CA (US);
Minghui Yu, Fremont, CA (US);
Min LI, Dublin, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Tong Zhao, Fremont, CA (US);
Min Zheng, Milpitas, CA (US);
Minghui Yu, Fremont, CA (US);
Min Li, Dublin, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A three step ion beam etch (IBE) sequence involving low energy (<300 eV) is disclosed for trimming a sensor critical dimension (free layer width=FLW) to less than 50 nm. A first IBE step has a steep incident angle with respect to the sensor sidewall and accounts for 60% to 90% of the FLW reduction. The second IBE step has a shallow incident angle and a sweeping motion to remove residue from the first IBE step and further trim the sidewall. The third IBE step has a steep incident angle to remove damaged sidewall portions from the second step and accounts for 10% to 40% of the FLW reduction. As a result, FLW approaching 30 nm is realized while maintaining high MR ratio of over 60% and low RA of 1.2 ohm-μm. Sidewall angle is manipulated by changing one or more ion beam incident angles.