The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Nov. 13, 2013
Applicant:

Avalanche Technology Inc., Fremont, CA (US);

Inventors:

Yuchen Zhou, San Jose, CA (US);

Ebrahim Abedifard, San Jose, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Mahmood Mozaffari, Los Gatos, CA (US);

Kimihiro Satoh, Beaverton, OR (US);

Bing K Yen, Cupertino, CA (US);

Yiming Huai, Pleasanton, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01);
Abstract

The present invention is directed to a method for reading and writing an STT-MRAM multi-level cell (MLC), which includes a plurality of MTJ memory elements coupled in series. The method detects the resistance states of individual MTJ memory elements in an MLC by sequentially writing each memory element to the low resistance state in order of ascending parallelizing write current threshold. If a written element switches the resistance state thereof after the write step, then the written element was in the high resistance state prior to the write step. Otherwise, the written element was in the low resistance state prior to the write step. The switching of the resistance state can be ascertained by comparing the resistance or voltage values of the plurality of memory elements before and after writing each of the plurality of memory elements in accordance with the embodiments of the present invention.


Find Patent Forward Citations

Zhou, Yuchen. (2014). Method for reading and writing multi-level cells (U.S. Patent No. 8724380). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8724380

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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