The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jun. 11, 2012
Applicants:
Hyun-cheol Bae, Daejeon, KR;
Kwang-seong Choi, Daejeon, KR;
Jong Tae Moon, Gyeryong-si, KR;
Jong-moon Park, Daejeon, KR;
Inventors:
Hyun-Cheol Bae, Daejeon, KR;
Kwang-Seong Choi, Daejeon, KR;
Jong Tae Moon, Gyeryong-si, KR;
Jong-Moon Park, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/08 (2013.01); H01L 2924/19042 (2013.01);
Abstract
Disclosed is a silicon interposer that can reduce the entire area of a semiconductor package and increase the degree of integration by forming inductors at a lower part in addition to an upper part of a silicon substrate. The silicon interposer includes a silicon substrate, an upper inductor layer formed at the upper part of the silicon substrate and a lower inductor layer formed at the lower part of the silicon substrate.