The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 24, 2013
Applicant:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Inventors:
Koki Yano, Chiba, JP;
Hirokazu Kawashima, Chiba, JP;
Kazuyoshi Inoue, Chiba, JP;
Shigekazu Tomai, Chiba, JP;
Masashi Kasami, Chiba, JP;
Assignee:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); H01L 29/786 (2006.01); H01L 29/221 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8  (1)In/(In+X)=0.29 to 0.99  (2)Zn/(X+Zn)=0.29 to 0.99  (3).