The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Oct. 04, 2012
Semileds Optoelectronics Co., Ltd., Chu-Nan, TW;
Chen-Fu Chu, Hsinchu, TW;
Feng-Hsu Fan, Jhonghe, TW;
Hao-Chun Cheng, Pingtung County, TW;
Trung Tri Doan, Baoshan, TW;
SemiLEDS Optoelectronics Co., Ltd., Chu-Nan, TW;
Abstract
A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.