The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Mar. 15, 2013
Microsemi Soc Corporation, San Jose, CA (US);
Jonathan Greene, Palo Alto, CA (US);
Frank W. Hawley, Campbell, CA (US);
John McCollum, Saratoga, CA (US);
Microsemi SoC Corporation, San Jose, CA (US);
Abstract
A resistive random access memory cell formed in an integrated circuit includes a first resistive random access memory device including an anode and a cathode, a second resistive random access memory device including an anode and a cathode, the cathode of the second resistive random access memory device connected to the anode of the first resistive random access memory device, a programming transistor having a first source/drain terminal connected to a programming potential node, a second source/drain terminal connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device, and a gate connected to a program-enable nod, and at least one switch transistor having a gate connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device.