The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 13, 2010
Yao-te Huang, Hsin-Chu, TW;
Chia-hua Chu, Zhubei, TW;
Yu-nu Hsu, Tainan, TW;
Chun-wen Cheng, Zhubei, TW;
Li-chung Peng, Hsin-Chu, TW;
Yao-Te Huang, Hsin-Chu, TW;
Chia-Hua Chu, Zhubei, TW;
Yu-Nu Hsu, Tainan, TW;
Chun-Wen Cheng, Zhubei, TW;
Li-Chung Peng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.