The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Oct. 04, 2007
Ming-daou Lee, Hsinchu, TW;
Chia-hua Ho, Hsinchu, TW;
Erh-kun Lai, Hsinchu, TW;
Kuang-yeu Hsieh, Hsinchu, TW;
Ming-Daou Lee, Hsinchu, TW;
Chia-Hua Ho, Hsinchu, TW;
Erh-Kun Lai, Hsinchu, TW;
Kuang-Yeu Hsieh, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory cell and a process for manufacturing the same are provided. In the process, a first electrode layer is formed on a conductive layer over a substrate, and then a transition metal layer is formed on the first electrode layer. After that, the transition metal layer is subjected to a plasma oxidation step to form a transition metal oxide layer as a precursor of a data storage layer, and a second electrode layer is formed on the transition metal oxide layer. A memory cell is formed after the second electrode layer, the transition metal oxide layer and the first electrode layer are patterned into a second electrode, a data storage layer and a first electrode, respectively.