The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jun. 22, 2011
Wing-chor Chan, Hsinchu, TW;
Chung-yu Hung, Ershuei Township, Changhua County, TW;
Chien-wen Chu, Yangmei Township, Taoyuan County, TW;
Wing-Chor Chan, Hsinchu, TW;
Chung-Yu Hung, Ershuei Township, Changhua County, TW;
Chien-Wen Chu, Yangmei Township, Taoyuan County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall.