The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Sep. 15, 2009
Yasushi Kobayashi, Kawasaki, JP;
Kouta Yoshikawa, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Tadahiro Imada, Kawasaki, JP;
Shirou Ozaki, Kawasaki, JP;
Yasushi Kobayashi, Kawasaki, JP;
Kouta Yoshikawa, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Tadahiro Imada, Kawasaki, JP;
Shirou Ozaki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile